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| SOT23 SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR ISSUE 2 JANUARY 1996 7 1 FLLD263 2 DIODE PIN CONNECTION 1 3 2 3 SOT23 PART MARKING DETAIL D63 ABSOLUTE MAXIMUM RATINGS. PARAMETER Repetitive Peak Reverse Voltage Average Rectified Forward Current Power Dissipation at Tamb = 25C Operating and Storage Temperature Range SYMBOL VRRM IF(AV) Ptot Tj:Tstg VALUE 100 250 3.0 330 -55 to +150 UNIT V mA A mW C Non-Repetitive Peak Forward Current (t=1s) IFSM ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Reverse Current Reverse Recovery Time* Forward Recovery Time Diode Capacitance SYMBOL IR trr tfr Cd MIN. MAX. 5 5 400 10 4 Typ 0.9 1.4 UNIT CONDITIONS. A nA ns ns pF VRRM=100V VRRM=100V, Tamb=150C IF= IR=50 400mA IF=10mA VR=1V, f=1MHz IF=10mA, Rise time=5ns 20% IF=-200mA Forward Overshoot Voltage Vfr Forward Voltage VF V V *Time for IR to recover to 10% of IR peak 3 - 98 FLLD258 FLLD261 FLLD263 TYPICAL CHARACTERISTICS 25 20 15 10 5 0 0 20 40 60 80 100 VF - Forward Voltage (V) IR v VF 3 - 99 |
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